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Investigation of InN layers grown by molecular beam epitaxy on GaN templates

Identifieur interne : 003E42 ( Main/Repository ); précédent : 003E41; suivant : 003E43

Investigation of InN layers grown by molecular beam epitaxy on GaN templates

Auteurs : RBID : Pascal:10-0292478

Descripteurs français

Pascal (Inist)
- Epitaxie jet moléculaire, Diffraction RX, Photoluminescence, Propriété optique, Cristallinité, Relation structure propriété, Microstructure, Paramètre cristallin, Contrainte résiduelle, Structure mosaïque, Nitrure d'indium, InN, Méthode template.

English descriptors

KwdEn :
- Crystallinity, Indium nitride, Lattice parameters, Microstructure, Molecular beam epitaxy, Mosaic structure, Optical properties, Photoluminescence, Property structure relationship, Residual stresses, Template method, XRD.

Abstract

An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.

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Le document en format XML

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<term>Microstructure</term>
<term>Molecular beam epitaxy</term>
<term>Mosaic structure</term>
<term>Optical properties</term>
<term>Photoluminescence</term>
<term>Property structure relationship</term>
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<front><div type="abstract" xml:lang="en">An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.</div>
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<fC01 i1="01" l="ENG"><s0>An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.</s0>
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Investigation of InN layers grown by molecular beam epitaxy on GaN templates

Investigation of InN layers grown by molecular beam epitaxy on GaN templates

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Abstract

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